VS12G476

Features: SpecificationsDescriptionThe VS12G476 has the following features including 1024 by 4-bit static RAM for cache or control store applications;Very fast Read/V1lrite cycle time.......2.5 ns;Single powersupply (2 Volts);Completely static operation;Very low sensitivity to total dose radiation...

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SeekIC No. : 004543191 Detail

VS12G476: Features: SpecificationsDescriptionThe VS12G476 has the following features including 1024 by 4-bit static RAM for cache or control store applications;Very fast Read/V1lrite cycle time.......2.5 ns;S...

floor Price/Ceiling Price

Part Number:
VS12G476
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:






Specifications






Description

The VS12G476 has the following features including 1024 by 4-bit static RAM for cache or control store applications;Very fast Read/V1lrite cycle time.......2.5 ns;Single powersupply (2 Volts);Completely static operation;Very low sensitivity to total dose radiation;Registered data inputs and outputs;28-pin leaded or leadless ceramic packages;Fullydecoded synchronous operation.

The Vitesse VS12G476 is a very high speed, fully decoded synchronous 1024 x 4-bit read/write static random access memory. The VS12G476 is self-timed and all data inputs and outputs are registered. The product needs only a single 2 Volt power supply. It is compatible in ECL board environments between -2 and 0 Volts, or in GaAs circuit board environments between 0 and +2 Volts. Input and output signal levels are shifted accordingly.This product is designed to interface with other GaAs I/O products such as the FURY Series of gate arrays for ultra high speed chip to chip communication. The inputs and outputs of the VS12G476 utilize UD levels which are 'native' to E/D GaAs technology and are consistent with 50  transmission line circuit board environments.The VS12G476 is packaged in a 28-pin ceramic LDCC or LCC. Its high speed makes it ideal for new designs in cache memory, signal processing, and video applications  where access time is the critical parameter. Its low sensitvity to total dose radiation makes it wellsuited to the harsh environments encountered in military and aerospace applications.The VS12G476 is fabricated in gallium arsenide using Vitesse's proprietary enhancement/depletion mode technology for high speed, low power operation.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement.
                                             
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