VN770P

PinoutSpecifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Brekdown Voltage 40 V IOUT Output Current (continuous) 9 A IR Reverse Output Current -9 A IIN Input Current ±10 mA -VCC Reverse Supply Current -4 V I...

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SeekIC No. : 004542410 Detail

VN770P: PinoutSpecifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Brekdown Voltage 40 V IOUT Output Current (continuous) 9 A IR Reverse Output Curr...

floor Price/Ceiling Price

Part Number:
VN770P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Pinout

  Connection Diagram


Specifications

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Brekdown Voltage

40

V

IOUT

Output Current (continuous)

9 A

IR

Reverse Output Current

-9

A

IIN

Input Current

±10 mA

-VCC

Reverse Supply Current

-4

V

ISTAT

Status Current

±10 mA
VESD

Electrostatic Discharge (C=100pF,R=1.5K; )

2000 V

Ptot

Power Dissipation@ TC=25°C

Internally Limited

W

Tj

Junction operating temperature

-40 to 150

Tstg

Storage Temperature

-55 to 150




Description

The VN770P is a device formed by three monolithic chips housed in a standard SO28 package: a double high side and two low side switches. Both the double high side and low side switches are made using STMicroelectronics VIPower technology. This VN770P device is suitable to drive a DC motor in a bridge configuration as well as to be used as a quad switch for any low voltage application. The dual high side switches have built-in thermal shut-down to protect the chip from over temperature and short circuit,status output to provide indication for open load in off and on state, overtemperature conditions and stuck-on to VCC. The low side switches are two OMNIFET types (fully autoprotected Power MOSFET in VIPower] technology). They have built-in thermal shut-down, linear current limitation and overvoltage clamping. Fault feedback for thermal intervention can be detected by monitoring the voltage at the input pin.

DUAL HIGH-SIDE SWITCH From the falling edge of the input signal, the status output, initially low to signal a fault condition (overtemperature or open load on-state), will go back to a high state with a different delay in case of overtemperature (tpovl) and in case of open open load (tpol) respectively.This feature of VN770P allows to discriminate the nature of the detected fault. To protect the VN770P device against short circuit and over current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When this temperature returns to 125 oC the switch is automatically turned on again. In short circuit the protection reacts with virtually no delay, the sensor (one for each channel) being located inside each of the two Power MOS areas. This positioning allows the device to operate with one channel in automatic thermal cycling and the other one on a normal load. An internal function of the devices ensures the fast demagnetization of inductive loads with a typical voltage (Vdemag) of -18V. This function allows to greatly reduces the power dissipation according to the formula:Pdem =0.5• Lload • (Iload)2 • [(VCC+Vdemag)/Vdemag] • f where f = switching frequency and Vdemag = demagnetization voltage.In this device if the GND pin is disconnected,with VCC not exceeding 16V, both channel will switch off.

LOW-SIDE SWITCHES During normal operation, the Input pin of VN770P is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.




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