Features: • Single 3.3V +/- 0.3V power supply• Clock frequency:166MHz, 143MHz, 125MHz• Fully synchronous with all signals referenced to a positive clock edge• ProgrammableCAS Iatency (2,3)• Programmable burst length (1,2,4,8,& Full page)• Programmable wrap s...
VG3617161ET: Features: • Single 3.3V +/- 0.3V power supply• Clock frequency:166MHz, 143MHz, 125MHz• Fully synchronous with all signals referenced to a positive clock edge• ProgrammableCAS...
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Features: • Single 3.3V (±0.3V ) power supply• High speed clock cycle time : 7.5ns/10n...
Features: • Single 3.3V (±0.3V ) power supply• High speed clock cycle time -7H: 133MHz...
Features: • Single 3.3V (±0.3V ) power supply• High speed clock cycle time : 7.5ns/10n...
Parameter | Symbol | Value | Unit |
Voltage on any pin relative to Vss |
VIN,VOUT | -1.0 to +4.6 | V |
Supply voltage relative to Vss | VDD,VDDQ | -1.0 to +4.6 | V |
Short circuit output current | IOUT | 50 | mA |
Power dissipation | PD | 1.0 | W |
Operating temperature | TOPT | 0 to + 70 | |
Storage temperature | TSTG | -55 to + 125 |
The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. VG3617161ET is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply. This SDRAM is delicately designed with performance concern for current high-speed application.Programmable CAS Latency and Burst Length make it possible to be used in widely various domains. VG3617161ET is packaged by using JEDEC standard pinouts and standard plastic 50-pin TSOP II.