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UTV080

SpecificationsMaximum Power Dissipation @ 25...........65 WattsMaximum Voltage and CurrentBVces Collector to Emitter Voltage............... 50 VoltsBVceo Collector to Emitter Voltage ...............28 VoltsBVebo Emitter to Base Voltage ...................3.5 VoltsIc Collector Current ................

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SeekIC No. : 004539381 Detail

UTV080: SpecificationsMaximum Power Dissipation @ 25...........65 WattsMaximum Voltage and CurrentBVces Collector to Emitter Voltage............... 50 VoltsBVceo Collector to Emitter Voltage ..................

UTV080 Data Sheet

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Part Number:
UTV080
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Specifications

Maximum Power Dissipation @ 25...... .....65 Watts

Maximum Voltage and Current
BVces Collector to Emitter Voltage............... 50 Volts
BVceo Collector to Emitter Voltage ...............28 Volts
BVebo Emitter to Base Voltage ...................3.5 Volts
Ic Collector Current ....................................2.5 Amps

Maximum Temperatures
Storage Temperature........................ - 65 to + 150
Operating Junction Temperature................... + 200


Description

The UTV080 is a COMMON EMITTER transistor capable of providing 8 Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. The transistor includes double input prematching for full broadband capability. Gold Metalization and Diffused Ballasting are used to provide high reliabilitym and supreme ruggedness.




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