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UTV005P

SpecificationsMaximum Power DissipationDevice Dissipation @ 25 ..........................................8 WMaximum Voltage and CurrentCollector to Base Voltage (BVces) .............................45 VEmitter to Base Voltage (BVebo) ..............................4.0 VCollector to Emitter Voltage ...

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SeekIC No. : 004539377 Detail

UTV005P: SpecificationsMaximum Power DissipationDevice Dissipation @ 25 ..........................................8 WMaximum Voltage and CurrentCollector to Base Voltage (BVces) ................................

UTV005P Data Sheet

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Part Number:
UTV005P
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Specifications

Maximum Power Dissipation
Device Dissipation @ 25 ..........................................8 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) .............................45 V
Emitter to Base Voltage (BVebo) ..............................4.0 V
Collector to Emitter Voltage (BVceo) .........................3.5 V
Collector Current (Ic) .............................................750 mA
Maximum Temperatures
Storage Temperature................................. -65 to +150
Operating Junction Temperature ...........................+200


Description

The UTV005P is a COMMON EMITTER transistor capable of providing 0.5 Watts Peak, Class A, RF Output Power over the band 470 - 860 MHz. Gold Metalization and Diffused Ballasting are used to provide high reliability and supreme ruggedness.




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