Features: 25ns maximum (3.3 volt supply) address access time Dual cavity package contains two (2) 512K x 8 industry- standard asynchronous SRAMs; the control architecture allows operation as an 8-bit data width TTL compatible inputs and output levels, three-state bidirectional data bus Typical rad...
UT8Q1024K8: Features: 25ns maximum (3.3 volt supply) address access time Dual cavity package contains two (2) 512K x 8 industry- standard asynchronous SRAMs; the control architecture allows operation as an 8-bi...
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Features: *25ns maximum (3.3 volt supply) address access time* MCM contains four (4) 512K x 8 indu...
SYMBOL | PARAMETER | LIMITS |
VDD |
DC supply voltage | -0.5 to 4.6V |
VI/O |
Voltage on any pin | -0.5 to 4.6V |
TSTG |
Storage temperature | -65 to +150C |
PD |
Maximum power dissipation | 1.0W (per byte) |
TJ |
Maximum junction temperature2 | +150 |
JC |
Thermal resistance, junction-to-case3 | 10/W |
II |
DC input current | ±10 mA |