UT8Q1024K8

Features: 25ns maximum (3.3 volt supply) address access time Dual cavity package contains two (2) 512K x 8 industry- standard asynchronous SRAMs; the control architecture allows operation as an 8-bit data width TTL compatible inputs and output levels, three-state bidirectional data bus Typical rad...

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SeekIC No. : 004539122 Detail

UT8Q1024K8: Features: 25ns maximum (3.3 volt supply) address access time Dual cavity package contains two (2) 512K x 8 industry- standard asynchronous SRAMs; the control architecture allows operation as an 8-bi...

floor Price/Ceiling Price

Part Number:
UT8Q1024K8
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/4

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Product Details

Description



Features:

25ns maximum (3.3 volt supply) address access time 
Dual cavity package contains two (2) 512K x 8 industry- standard asynchronous SRAMs; the control architecture
allows operation as an 8-bit data width 
TTL compatible inputs and output levels, three-state bidirectional data bus
Typical radiation performance
   - Total dose: 50krad(Si)
   - SEL Immune >80 MeV-cm 2/mg

   - LETTH(0.25) = >10 MeV-cm2 /mg
   - Saturated Cross Section cm2 per bit, 5.0E-9
   - E-8 errors/bit-day, Adams 90% geosynchronous heavy ion 
Packaging options:
  - 44-lead bottom brazed dual CFP (BBTFP) (4.6 grams)
Standard Microcircuit Drawing 5962-01532
  - QML T and Q compliant part



Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER LIMITS
VDD
DC supply voltage -0.5 to 4.6V
VI/O
Voltage on any pin -0.5 to 4.6V
TSTG
Storage temperature -65 to +150C
PD
Maximum power dissipation 1.0W (per byte)
TJ
Maximum junction temperature2 +150
JC
Thermal resistance, junction-to-case3 10/W
II
DC input current ±10 mA



Description

The QCOTSTMUT8Q1024K8 Quantified Commercial Off-the-Shelf product is a high-performance 1M byte (8Mbit) CMOS
static RAM built with two individual 524,288 x 8 bit SRAMs with a common output enable. Memory access and control is provided by an active LOW chip enable (En), an active LOW output enable (G). This device has a power-down feature that reduces power consumption by more than 90% when deselected.

Writing to each memory is accomplished by taking one of the chip enable (En) inputs LOW and write enable (Wn)inputs LOW. Data on the I/O pins is then written into the location specified on the address pins (A0 through A18 ). Reading from the UT8Q1024K8 is accomplished by taking one of the chip enable (Eand output enable (G) LOW while forcing write enable (Wn) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. Only one SRAM can be read or written at a time.

The input/output pins of UT8Q1024K8 are placed in a high impedance state when the device is deselected (En HIGH), the outputs are disabled (G HIGH), or during a write operation (En LOW and Wn LOW).


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