Features: `RAS access time: 35, 40, 50, 60` 2CAS Byte/Word Read/Write operation` CAS - before RAS refresh capability` RAS only and Hidden refresh capability` Early write or output enable controlled write` Extended Data Out operation` Package : 40 pin 400mil SOJ 40 / 44 pin 400mil TSOP-` Single +5V...
UT51C164: Features: `RAS access time: 35, 40, 50, 60` 2CAS Byte/Word Read/Write operation` CAS - before RAS refresh capability` RAS only and Hidden refresh capability` Early write or output enable controlled ...
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PARAMETER |
SYMBOL |
VALUE |
UNIT |
Voltage on any pin relative to Vss |
VT |
-1.0 to +7 |
V |
Supply voltage relative to VSS |
VDD |
-1.0 to +7 |
V |
Short circuit output current |
IOUT |
50 |
mA |
Power dissipation |
PD |
1.0 |
W |
Operating temperature |
TA |
0 to + 70 |
ºC |
Storage temperature |
TSTG |
-55 to +125 |
ºC |
The UT51C164 is high speed 5V EDO DRAMs organized as 256K bit X 16 I/O and fabricated with the CMOS process. The UT51C164 offers a combination of unique features including : EDO Page Mode operation for higher bandwidth with Page Mode cycle time as short as 14ns. All inputs are
TTL compatible. Input and output capacitance is significantly lowered to increase performance and minimize loading. These features make the UT51C164 suited for wide variety of high performance computer systems and peripheral applications.