UT51C161

The UT51C161 is high speed 5 volt EDO DRAMs organized as 64k bit * 16 I/O and fabricated with the CMOS process.The UT51C161 offers a combination of unique features including:EDO page mode operation for higher bandwidth with page mode cycle time as short as 14ns .Allinputs are TTL compatible.Input and output capacitance is significantly lowered to increase perfoemance and minimize loading.These features make the UT51C161 suited for wide variety of high performance computer systems and peripheral applications. Features of the UT51C161 are:(1)extended data out operation; (2)RAS access time:35,40,50,60; (3)2 CAS byte/word read/write operation; (4)CAS-before-RAS refresh capability; (5)RAS only and hidden refresh capability; (6)early write or output enable controlled write; (7)package:40pin 400mil SOJ packages;40 pin 400min TSOP-||; (8)single+5V±10% power supply; (9)TTL compatible inputs and outputs; (10)256 refresh cycles/8ms.

The absolute maximum ratings of the UT51C161 can be summarized as:(1)voltage on any pin relative to Vss:-1.0 to 7V; (2)supply voltage relative to Vss:-1.0 to 7V; (3)short circuit output current:50mA; (4)power dissipation:1.0 W; (5)operationg temperature:0 to 70; (6)storage temperature:-55 to 125.

The electrical characteristics(Ta=25) of the UT51C161 can be summarized as:(1)input leakage current:-10~10uA; (2)output leakage current:-10~10uA; (3)input low voltage:-1~0.8V; (4)input high voltage:2.4~VDD+1V; (5)output low voltage:0.4V; (6)output high voltage:2.4V.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .