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UT3403

Specifications Parameter Symbol Rating Unit Drain to source voltage VDSS -30 V Gate to source voltage VGSS ±12 V Continuous Drain Current (Note 3) ID -2.6 A Pulsed Drain Current (Note 1) IDM -20 A Power dissipation PD 1.4 W Junction Temperature TJ +1...

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SeekIC No. : 004539054 Detail

UT3403: Specifications Parameter Symbol Rating Unit Drain to source voltage VDSS -30 V Gate to source voltage VGSS ±12 V Continuous Drain Current (Note 3) ID -2.6 A Pulsed Dra...

UT3403 Data Sheet

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Part Number:
UT3403
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Parameter Symbol Rating Unit
Drain to source voltage VDSS -30 V
Gate to source voltage VGSS ±12 V
Continuous Drain Current (Note 3) ID -2.6 A
Pulsed Drain Current (Note 1) IDM -20 A
Power dissipation PD

1.4

 W
Junction Temperature TJ +150
Storage temperature Tstg -55 to +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.




Description

The UTC UT3403 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities, operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.




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