Specifications Parameter Symbol Rating Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 1) Ta =25 ID -4.2 A Ta =75 -3.5 A Pulsed Drain Current (Note 2) IDM -30 A Power Dis...
UT3401: Specifications Parameter Symbol Rating Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 1) Ta =25 ID ...
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Parameter |
Symbol |
Rating |
Unit | |
Drain-Source Voltage |
VDSS |
-30 |
V | |
Gate-Source Voltage |
VGSS |
±12 |
V | |
Continuous Drain Current (Note 1) | Ta =25 |
ID |
-4.2 |
A |
Ta =75 |
-3.5 |
A | ||
Pulsed Drain Current (Note 2) |
IDM |
-30 |
A | |
Power Dissipation (Note 1) |
PD |
1.4 |
W | |
Junction temperature |
TJ |
150 |
||
Storage temperature |
TSTG |
-55 to +150 |
The UTC UT3401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities, operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.