PinoutSpecifications CHARACTERISTICS SYMBOL RATING UNIT Drain-Source VoltageGate-Source Voltage VDSVGS 30±20 VV Continuous Drain Current (Note 3)Pulsed Drain Current (Note 1, 2)Total Power Dissipation (Tc= 25 ) IDIDMPT 3.6160.96 AAW Channel TemperatureStorage Temperature TJ...
UT2316: PinoutSpecifications CHARACTERISTICS SYMBOL RATING UNIT Drain-Source VoltageGate-Source Voltage VDSVGS 30±20 VV Continuous Drain Current (Note 3)Pulsed Drain Current (Note 1, 2)Tota...
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Features: `5V at 200mA from two cells.`10A quiescent current in shutdown.`Operates with VIN as low...
Features: `5V at 200mA from two cells.`10A quiescent current in shutdown.`Operates with VIN as low...
CHARACTERISTICS | SYMBOL | RATING | UNIT |
Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
30 ±20 |
V V |
Continuous Drain Current (Note 3) Pulsed Drain Current (Note 1, 2) Total Power Dissipation (Tc= 25 ) |
ID IDM PT |
3.6 16 0.96 |
A A W |
Channel Temperature Storage Temperature |
TJ Tstg |
+150 55 ~ +150 |
The UTC UT2316L is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance, favorable stabilization.
Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.