UT2316

PinoutSpecifications CHARACTERISTICS SYMBOL RATING UNIT Drain-Source VoltageGate-Source Voltage VDSVGS 30±20 VV Continuous Drain Current (Note 3)Pulsed Drain Current (Note 1, 2)Total Power Dissipation (Tc= 25 ) IDIDMPT 3.6160.96 AAW Channel TemperatureStorage Temperature TJ...

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UT2316 Picture
SeekIC No. : 004539049 Detail

UT2316: PinoutSpecifications CHARACTERISTICS SYMBOL RATING UNIT Drain-Source VoltageGate-Source Voltage VDSVGS 30±20 VV Continuous Drain Current (Note 3)Pulsed Drain Current (Note 1, 2)Tota...

floor Price/Ceiling Price

Part Number:
UT2316
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Pinout

  Connection Diagram


Specifications

CHARACTERISTICS SYMBOL RATING UNIT
Drain-Source Voltage

Gate-Source Voltage
VDS

VGS
30

±20
V

V
Continuous Drain Current (Note 3)

Pulsed Drain Current (Note 1, 2)

Total Power Dissipation (Tc= 25 )
ID

IDM

PT
3.6

16

0.96
A

A

W
Channel Temperature

Storage Temperature
TJ

Tstg
+150

55 ~ +150



Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.



Description

The UTC UT2316L is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance, favorable stabilization.

Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.




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