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UT2302

Specifications Parameter Symbol Rating Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS ±8 V Drain current ID 2.4 A Drain current IDM 10 A Power dissipation TC=25 TA=25 PD 1.250.8 W Junction Temperature TJ 150 Storage temperatur...

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UT2302: Specifications Parameter Symbol Rating Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS ±8 V Drain current ID 2.4 A Drain current IDM 10 A Power...

UT2302 Data Sheet

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Part Number:
UT2302
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Parameter Symbol Rating Unit
Drain to source voltage VDSS 20 V
Gate to source voltage VGSS ±8 V
Drain current ID 2.4 A
Drain current IDM 10 A
Power dissipation TC=25
TA=25		 PD

1.25
0.8

 W
Junction Temperature TJ 150
Storage temperature Tstg -55 to +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.


Description

The UT2302 is N-channel Power MOSFET, designed with high density cell,.􀀁 with fast switching speed, ultra low on-resistance ,excellent thermal and electrical capabilities . Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters .




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