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UT2309

Specifications PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 3) ID -3.7 A Pulsed Drain Current (Note 1, 2) IDM -12 A Total Power Dissipation PD 1...

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SeekIC No. : 004539048 Detail

UT2309: Specifications PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 3) ID -3.7...

UT2309 Data Sheet

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Part Number:
UT2309
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (Note 3)
ID
-3.7
A
Pulsed Drain Current (Note 1, 2)
IDM
-12
A
Total Power Dissipation
PD
1.38
W
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-55 ~ +150


Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
         Absolute maximum ratings are stress ratings only and functional device operation is not implied.




Description

The UT2309 is P-channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.




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