UT2309 Selling Leads, Price trend, UT2309 DataSheet download, circuit diagram from SeekIC.com

Specifications PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 3) ID -3.7 A Pulsed Drain Current (Note 1, 2) IDM -12 A Total Power Dissipation PD 1...

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SeekIC No. : 004539048 Detail

UT2309: Specifications PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 3) ID -3.7...

UT2309 Data Sheet

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Part Number:: UT2309
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/22

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Recent History
What is this?

UT2302 evaluate
Specifications Parameter Symbol Rating Unit Drain to source voltage VDSS 20 V Gat...
UT2306-3.3V evaluate
Features: `5V at 200mA from two cells.`10A quiescent current in shutdown.`Operates with VIN as low...
UT2306-5.0V evaluate
Features: `5V at 200mA from two cells.`10A quiescent current in shutdown.`Operates with VIN as low...

Product Details

Description

Specifications

PARAMETER	SYMBOL	RATINGS	UNIT
Drain-Source Voltage	V_DSS	-30	V
Gate-Source Voltage	V_GSS	±12	V
Continuous Drain Current (Note 3)	I_D	-3.7	A
Pulsed Drain Current (Note 1, 2)	I_DM	-12	A
Total Power Dissipation	P_D	1.38	W
Junction Temperature	T_J	+150
Storage Temperature	T_STG	-55 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Description

The UT2309 is P-channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

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UT2309

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