USB10P Selling Leads, Price trend, USB10P DataSheet download, circuit diagram from SeekIC.com

Features: ·-4.5 A, -20 V. RDS(ON) = 0.045 W @ VGS = -4.5 V RDS(ON) = 0.065 W @ VGS = -2.5 V.·Low gate charge (13nC typical).·High performance trench technology for extremely low RDS(ON).·SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)Specifications ...

See larger image

SeekIC No. : 004538755 Detail

USB10P: Features: ·-4.5 A, -20 V. RDS(ON) = 0.045 W @ VGS = -4.5 V RDS(ON) = 0.065 W @ VGS = -2.5 V.·Low gate charge (13nC typical).·High performance trench technology for extremely low RDS(ON).·SuperSOTTM-...

USB10P Data Sheet

Get Latest Price

Part Number:: USB10P
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/11/22

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

USB100 evaluate
Features: · USB 1.0 standard compliant· Has the necessary on-chip transceivers· Support for 2D and...
USB10H evaluate
MOSFET 20V Dual P-Channel
USB1101 evaluate
Features: · Complies with USB Specification Rev 2.0· Supports DAT_VP/SE0_VM host mode· Utilizes di...

Product Details

Description

Features:

·-4.5 A, -20 V. R_DS(ON) = 0.045 W @ V_GS = -4.5 V R_DS(ON) = 0.065 W @ V_GS = -2.5 V.
·Low gate charge (13nC typical).
·High performance trench technology for extremely low RDS(ON).
·SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

Specifications

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-20	V
V_GSS	Gate-Source Voltage-Continuous	±8	V
I_D	Drain Current - Continuous (Note 1a) - Pulsed	-4.5 -20	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b)	1.6 0.8	W
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150	°C
R_JA	Thermal Resistance, Junction-to-Ambient (Note 1a)	78	°C/W
R_JC	Thermal Resistance, Junction-to-Case (Note 1)	30	°C/W

Description

This P -Channel 2.5V specified MOSFET of the USB10P is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices of the USB10P are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Customers Who Bought This Item Also Bought

USB1T11ABQX
US $$2.80 - 6.80 / Piece

Supply Ability:10000Month

View details
USB1T11AMTCX
US $$1.00 - 2.00 / Piece

Supply Ability:10000Week

View details
BT06蓝牙串口模块 51单片机兼容HC-06
US $$1.30 - 1.50 / Piece

Supply Ability:100Day

View details
PM150RSA060-S81AH0G,IGBT
US $$41.70 - 42.00 / Piece

Supply Ability:10Day

View details
ARDUINO IIC/I2C 液晶模块，IGBT
US $$4.50 - 4.80 / Piece

Supply Ability:100Day

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

USB10P

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

RF and RFID(1780)

Undefined Category(248)

Relays(6300)

Audio Products(940)

Resistors(1299)

Optoelectronics(3638)