USB10H

MOSFET 20V Dual P-Channel

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USB10H Picture
SeekIC No. : 00161588 Detail

USB10H: MOSFET 20V Dual P-Channel

floor Price/Ceiling Price

Part Number:
USB10H
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/31

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : - 1.9 A
Resistance Drain-Source RDS (on) : 0.17 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.17 Ohms
Continuous Drain Current : - 1.9 A


Features:

• -1.9 A, -20 V. RDS(on) = 0.170 @ VGS = -4.5 V RDS(on) = 0.250 @ VGS = -2.5 V
• Low gate charge (3 nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).



Application

• Load switch
• Battery protection
• Power management



Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current - Continuous (Note 1a)
- Pulsed
-1.9
-5
A
PD
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
0.96
0.9
0.7
W
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
RJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
130
°C/W
RJC
Thermal Resistance, Junction-to-Case (Note 1)
60
°C/W



Description

These P-Channel 2.5V specified MOSFETs USB10H are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These USB10H have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.




Parameters:

Technical/Catalog InformationUSB10H
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C1.9A
Rds On (Max) @ Id, Vgs170 mOhm @ 1.9A, 4.5V
Input Capacitance (Ciss) @ Vds 441pF @ 10V
Power - Max700mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs4.2nC @ 4.5V
Package / CaseSuperSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names USB10H
USB10H



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