US6M2TR, US $ .16-.42 , ROHM Semiconductor, US6M2TR DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00150974 Detail

US6M2TR: MOSFET N+P 20V 1.5A/1A

US6M2TR Data Sheet

US $ .16~.42 / Piece | Get Latest Price

Part Number:: US6M2TR
Mfg:: ROHM Semiconductor
Supply Ability:: 5000

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Upload time: 2025/2/15

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What is this?

US6M1 evaluate
Features: · Low on-resistance.· Built-in G-S Protection Diode.· Small and Surface Mount Package (T...
US6M1TR evaluate
US $.11 - .13 / Piece

MOSFET N+P 30 20V 1A
US6M11TR evaluate
US $.12 - .12 / Piece

MOSFET N/P-CH 20V 1.5A TUMT6

Product Details

Quick Details

Transistor Polarity :	N and P-Channel	Drain-Source Breakdown Voltage :	+ 30 V, - 20 V
Gate-Source Breakdown Voltage :	12 V	Continuous Drain Current :	+/- 1.5 A, +/- 1 A
Resistance Drain-Source RDS (on) :	0.24 Ohms	Configuration :	Dual
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TUMT-6	Packaging :	Reel

Description

Mounting Style : SMD/SMT
Packaging : Reel
Gate-Source Breakdown Voltage : 12 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Transistor Polarity : N and P-Channel
Resistance Drain-Source RDS (on) : 0.24 Ohms
Drain-Source Breakdown Voltage : + 30 V, - 20 V
Continuous Drain Current : +/- 1.5 A, +/- 1 A
Package / Case : TUMT-6

Parameters:

Technical/Catalog Information	US6M2TR
Vendor	Rohm Semiconductor(VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	30V, 20V
Current - Continuous Drain (Id) @ 25° C	1.5A, 1A
Rds On (Max) @ Id, Vgs	240 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds	80pF @ 10V
Power - Max	1W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	2.2nC @ 4.5V
Package / Case	TUMT6
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	US6M2TR US6M2TR US6M2DKR ND US6M2DKRND US6M2DKR

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US6M2TR

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