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US6M11TR

MOSFET N/P-CH 20V 1.5A TUMT6

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SeekIC No. : 003430047 Detail

US6M11TR: MOSFET N/P-CH 20V 1.5A TUMT6

US6M11TR Data Sheet

floor Price/Ceiling Price

US $ .12~.12 / Piece | Get Latest Price
Part Number:
US6M11TR
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • Unit Price
  • $.12
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Quick Details

Series: - Manufacturer: Rohm Semiconductor
FET Type: N and P-Channel FET Feature: Logic Level Gate
Drain Source Voltage VDS : + / - 20 V Drain to Source Voltage (Vdss): 20V, 12V
Current - Continuous Drain (Id) @ 25° C: 1.5A, 1.3A Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) @ Vgs: 1.8nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 110pF @ 10V Power - Max: 700mW
Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6    

Description

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Series: -
Gate Charge (Qg) @ Vgs: 1.8nC @ 4.5V
Manufacturer: Rohm Semiconductor
Supplier Device Package: UMT6
Vgs(th) (Max) @ Id: 1V @ 1mA
Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds: 110pF @ 10V
Power - Max: 700mW
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 20V, 12V
Current - Continuous Drain (Id) @ 25° C: 1.5A, 1.3A


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