Features: 1) Two Nch MOSFETs are put in TUMT6 package.2) High-speed switching, Low On-resistance.3) 1.8V driveApplicationSwitchingSpecifications Parameter Symbol Ratings UNIT Drain to Source Voltage VDSS 20 V Gate to Source Voltage VGSS ±10 V Drain current Continuous ID ...
US6K4: Features: 1) Two Nch MOSFETs are put in TUMT6 package.2) High-speed switching, Low On-resistance.3) 1.8V driveApplicationSwitchingSpecifications Parameter Symbol Ratings UNIT Drain to Sou...
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Parameter | Symbol | Ratings | UNIT | |
Drain to Source Voltage | VDSS | 20 | V | |
Gate to Source Voltage | VGSS | ±10 | V | |
Drain current | Continuous | ID | ±1.5 | A |
Pulsed | IDP*1 | ±3.0 | ||
Source current (Body diode) |
Continuous | IS | 0.6 | A |
Pulsed | ISP*1 | 2.4 | ||
Total Power Dissipation | PD*2 | 1.0 | W / TOTAL | |
0.7 | W / ELEMENT | |||
Channel Temperature | Tch | 150 | ||
Storage Temperature | Tstg | 55 to +150 |