Features: ·Two Nch MOS FETs are put in TUMT6 package.· High-speed switching, Low On-resistance.·4V drive.Application· SwitchingSpecifications Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Drain current Continuo...
US6K2: Features: ·Two Nch MOS FETs are put in TUMT6 package.· High-speed switching, Low On-resistance.·4V drive.Application· SwitchingSpecifications Parameter Symbol Limits Unit Drain-so...
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Parameter |
Symbol |
Limits |
Unit | ||
Drain-source voltage |
VDSS |
30 |
V | ||
Gate-source voltage |
VGSS |
20 |
V | ||
Drain current | Continuous |
ID |
±1.4 |
A | |
Pulsed |
IDP*1 |
±5.6 |
A | ||
Source current |
Continuous |
IS |
0.6 |
A | |
Pulsed |
ISP*1 |
5.6 |
A | ||
Total power dissipation |
PD*2 |
1.0 |
W / TOTAL | ||
0.7 |
W / ELEMENT | ||||
Channel temperature |
Tch |
150 |
°C | ||
Range of storage temperature |
Tstg |
−55 to +150 |
°C |