Features: · Two Pch MOSFET transistors in a single TUMT6 package.· Mounting cost and area can be cut in half.· Low on-resistance.· Low voltage drive (2.5V) makes this device ideal for portable equipment.· Easily designed drive circuits.Application·switchSpecifications Parameter Symbol L...
US6J2: Features: · Two Pch MOSFET transistors in a single TUMT6 package.· Mounting cost and area can be cut in half.· Low on-resistance.· Low voltage drive (2.5V) makes this device ideal for portable equip...
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Parameter |
Symbol |
Limits |
Unit |
Drain-source voltage |
VDSS |
-20 |
V |
Gate-source voltage |
VGSS |
±12 |
V |
Drain current Continuous |
ID |
±1 |
A∗1 |
Pulsed |
IDP |
±4 |
A |
Source current Continuous (Body diode) Pulsed |
IS ISP |
-0.4 -1.6 |
A∗1 |
Total power dissipation (TC=25°C) |
PD |
1 |
W ∗2 |
Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
−55 to +150 |
°C |