MOSFET 2P-CH 12V 1.3A TUMT6
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Series: | - | Manufacturer: | Rohm Semiconductor |
FET Type: | 2 P-Channel (Dual) | FET Feature: | Logic Level Gate |
Drain Source Voltage VDS : | + / - 20 V | Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25° C: | 1.3A | Rds On (Max) @ Id, Vgs: | 260 mOhm @ 1.3A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA | Gate Charge (Qg) @ Vgs: | 2.4nC @ 4.5V |
Input Capacitance (Ciss) @ Vds: | 290pF @ 6V | Power - Max: | 700mW |
Mounting Type: | Surface Mount | Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | UMT6 |