Features: ·Provide bi-direction current - Sourcing or sinking current up to 3A·1.25V/0.9V output for DDR I/II applications· Fast transient response·High output accuracy - ±20mv over load, VOUT offset and temperature·Adjustable output voltage by external resistors·Current-limit protection·On-chip t...
UR5516A: Features: ·Provide bi-direction current - Sourcing or sinking current up to 3A·1.25V/0.9V output for DDR I/II applications· Fast transient response·High output accuracy - ±20mv over load, VOUT offse...
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PARAMETER |
SYMBOL |
RATINGS |
UNIT |
VCNTL Supply Voltage, VCNTL to GND |
VCNTL |
-0.2 ~ 7 |
V |
VIN Supply Voltage, VIN to GND |
VIN |
-0.2 ~ 3.9 |
V |
Power Dissipation |
PD |
Internally Limited |
W |
Junction Temperature |
TJ |
+150 |
|
Storage Temperature |
TSTG |
-40 ~ +150 |
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
The UTC UR5516A is designed to provide a regulated voltage with bi-directional output current for DDR-SDRAM termination. Current-limit work to limit the short-circuit current, on-chip thermal shutdown provides protection against any combination of overload that would create excessive junction temperature.
The output voltage of UR5516A tracks the voltage at VREF pin. A resistor divider connected to VIN, GND and VREF pins is used to provide a half voltage of VIN to VREF pin. In addition, an external ceramic capacitor and an open-drain transistor connected to VREF pin provides soft-start and shutdown control respectively. Pulling and holding the VREF to GND shuts off the output. The output of UTC UR5516A will be high impedance after being shut down by VREF or thermal shutdown function.