Features: * Provide bi-direction current- Sourcing or sinking current up to 3A* 1.25V/0.9V output for DDR I/II applications* Fast transient response* High output accuracy- ±20mv over load, VOUT offset and temperature* Adjustable output voltage by external resistors* Current-limit protection* On-ch...
UR5516: Features: * Provide bi-direction current- Sourcing or sinking current up to 3A* 1.25V/0.9V output for DDR I/II applications* Fast transient response* High output accuracy- ±20mv over load, VOUT offs...
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PARAMETER | SYMBOL | RATINGS | UNIT |
VCNTL Supply Voltage, VCNTL to GND VIN Supply Voltage, VIN to GND |
VCNTL VIN |
-0.2 ~ 7 -0.2 ~ 3.9 |
V V |
Power Dissipation Junction Temperature Storage Temperature |
PD TJ TSTG |
Internally Limited +150 -40 ~ +150 |
W |
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
The UTC UR5516 is designed to provide a regulated voltage with bi-directional output current for DDR-SDRAM termination.
Current-limit of UR5516 work to limit the short-circuit current, on-chip thermal shutdown provides protection against any combination of overload that would create excessive junction temperature. The output voltage tracks the voltage at VREF pin. A resistor divider connected to VIN, GND and VREF pins is used to provide a half voltage of VIN to VREF pin. In addition, an external ceramic capacitor and an open-drain transistor connected to VREF pin of UR5516 provides soft-start and shutdown control respectively. Pulling and holding the VREF to GND shuts off the output. The output of UTC UR5516 will be high impedance afterbeing shut down by VREF or thermal shutdown function.