UMA4NT1G

Transistors Switching (Resistor Biased) 100mA 50V Dual NPN

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SeekIC No. : 00223856 Detail

UMA4NT1G: Transistors Switching (Resistor Biased) 100mA 50V Dual NPN

floor Price/Ceiling Price

Part Number:
UMA4NT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/8/14

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Product Details

Quick Details

Configuration : Dual Common Emitter Transistor Polarity : PNP
Typical Input Resistor : 10 KOhms Mounting Style : SMD/SMT
Package / Case : SC-88A/SOT-353 Collector- Emitter Voltage VCEO Max : 50 V
Continuous Collector Current : 0.1 A Peak DC Collector Current : 100 mA
Power Dissipation : 150 mW Maximum Operating Temperature : + 150 C
Packaging : Reel    

Description

Typical Resistor Ratio :
Maximum Operating Frequency :
Maximum Operating Temperature : + 150 C
Packaging : Reel
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 50 V
Typical Input Resistor : 10 KOhms
Transistor Polarity : PNP
Peak DC Collector Current : 100 mA
Continuous Collector Current : 0.1 A
Power Dissipation : 150 mW
Package / Case : SC-88A/SOT-353
Configuration : Dual Common Emitter


Features:

• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Pb−Free Packages are Available



Pinout

  Connection Diagram


Specifications

Parameter Symbol Rating UNIT
Collector-base voltage VCBO 50 Vdc
Collector-emitter voltage VCEO 50 Vdc
Collector current IC 100 mAdc



Description

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the UMC2NT1 series, two BRT devices are housed in the SOT−353 package which is ideal for low power surface mount applications where board space is at a premium.




Parameters:

Technical/Catalog InformationUMA4NT1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor Type2 PNP - Pre-Biased (Dual)
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max150mW
Resistor - Base (R1) (Ohms)10K
Resistor - Emitter Base (R2) (Ohms)-
Vce Saturation (Max) @ Ib, Ic250mV @ 300A, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Frequency - Transition-
Mounting TypeSurface Mount
Package / CaseSC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names UMA4NT1G
UMA4NT1G
UMA4NT1GOS ND
UMA4NT1GOSND
UMA4NT1GOS



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