Transistors Switching (Resistor Biased) 100mA 50V Dual NPN
UMA4NT1: Transistors Switching (Resistor Biased) 100mA 50V Dual NPN
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Configuration : | Dual Common Emitter | Transistor Polarity : | PNP |
Typical Input Resistor : | 10 KOhms | Mounting Style : | SMD/SMT |
Package / Case : | SC-88A/SOT-353 | Collector- Emitter Voltage VCEO Max : | 50 V |
Continuous Collector Current : | 0.1 A | Peak DC Collector Current : | 100 mA |
Power Dissipation : | 150 mW | Maximum Operating Temperature : | + 150 C |
Packaging : | Reel |
Parameter |
VALUE |
SYMBOL |
UNIT |
Collector-Base Voltage |
50 |
VCBO |
Vdc |
Collector-Emitter Voltage |
50 |
VCEO |
Vdc |
Collector Current |
100 |
IC |
mAdc |
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the UMC2NT1 series, two BRT devices are housed in the SOT−353 package which is ideal for low power surface mount applications where board space is at a premium.
Technical/Catalog Information | UMA4NT1 |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Current - Collector (Ic) (Max) | 100mA |
Power - Max | 150mW |
Resistor - Base (R1) (Ohms) | 10K |
Resistor - Emitter Base (R2) (Ohms) | - |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300A, 10mA |
Current - Collector Cutoff (Max) | 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Frequency - Transition | - |
Mounting Type | Surface Mount |
Package / Case | SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP |
Packaging | Tape & Reel (TR) |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | UMA4NT1 UMA4NT1 UMA4NT1OS ND UMA4NT1OSND UMA4NT1OS |