UL62H256A

Power Supply Voltage V_CC............... -0.3 to 4.6 V
Input Voltage V_I .................-0.5 V_CC to + 0.5 ^b V
Output Voltage V_O............. -0.5 V_CC to + 0.5 _b V
Power Dissipation P_D................................ ... 1 W
Operating Temperature K-Type Ta......-40 to 85
Operating Temperature A-Type Ta....-40 to 125
Storage Temperature Tstg ..................-65 150
Output Short-Circuit Current at V_CC = 3.3 V and V_O = 0 V ^c | I_OS |........100 mA

a Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is not implied.Exposure to absolute maximum rating conditions for extended periods may affect reliability b Maximum voltage is 4.6 V c Not more than 1 output should be shorted at the same time. Duration of the short circuit should not exceed 30 s.

The UL62H256A is a static RAM manufactured using a CMOS process technology with the following operating modes:
- Read - Standby
- Write - Data Retention

The memory array is based on a 6-Transistor cell.The circuit is activated by the falling edge of E. The address and control inputs open simultaneously.According to the information of W and G, the data inputs, or outputs,are active. In a Read cycle, the data outputs are activated by the falling edge of G, afterwards the data word will be available at the outputs DQ0-DQ7. After the address change, the data outputs go High-Z until the new information is available. The data outputs have no preferred state. The Read cycle is finished by the falling edge of W,or by the rising edge of E, respectively.

Data retention is guaranteed down to 2 V. With the exception of E, all inputs consist of NOR gates, so that no pull-up/pull-down resistors are required.