U637H256

Features: · High-performance CMOS non-· volatile static RAM 32768 x 8 bits· 25 ns Access Time· 10 ns Output Enable Access Time· ICC = 15 mA typ. at 200 ns Cycle Time· Unlimited Read and Write Cycles to SRAM· Automatic STORE to EEPROM· on Power Down using charge· stored in an integrated capacitor· ...

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U637H256 Picture
SeekIC No. : 004535017 Detail

U637H256: Features: · High-performance CMOS non-· volatile static RAM 32768 x 8 bits· 25 ns Access Time· 10 ns Output Enable Access Time· ICC = 15 mA typ. at 200 ns Cycle Time· Unlimited Read and Write Cycles...

floor Price/Ceiling Price

Part Number:
U637H256
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/7

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Product Details

Description



Features:

· High-performance CMOS non-
· volatile static RAM 32768 x 8 bits
· 25 ns Access Time
· 10 ns Output Enable Access Time
· ICC = 15 mA typ. at 200 ns Cycle Time
· Unlimited Read and Write Cycles to SRAM
· Automatic STORE to EEPROM
· on Power Down using charge
· stored in an integrated capacitor
· Software initiated STORE
· Automatic STORE Timing
· 106 STORE cycles to EEPROM
· 100 years data retention in EEPROM
· Automatic RECALL on Power Up
· Software RECALL Initiation
· Unlimited RECALL cycles from EEPROM
· Single 5 V ± 10 % Operation
· Operating temperature range: 0 to 70 °C -40 to 85°C
· QS 9000 Quality Standard
· (MIL STD 883C M3015.7)
· RoHS compliance and Pb- free
· Package: PDIP28 (600 mil)                              



Pinout

  Connection Diagram


Specifications

Absolute Maximum Ratingsa Symbol Min. Max. Unit
Power Supply Voltage VCC -0.5 7 V
Input Voltage VI -0.3 VCC+0.5 V
Output Voltage VO -0.3 VCC+0.5 W
Power Dissipation PD   1
Operating Temperature C-Type
K-Type
Ta 0
-40
70
85
Storage Temperature Tstg -65 150



Description

The U637H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.

The U637H256 is a fast static RAM 25 ns) with a nonvolatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data of U637H256 transfers from the SRAM to the EEPROM (the STORE operation) take place automatically upon power down using charge stored in an integrated capacitor. Transfers from the EEPROM to the SRAM (the RECALL operation) take place automatically on power up.

The U637H256 combines the high performance and ease of use of a fast SRAM with nonvolatile data integrity. STORE cycles also may be initiated under user control via a software sequence. Once a STORE cycle is initiated, further input or output are disabled until the cycle is completed. Because a sequence of addresses is used for STORE initiation, it is important that no other read or write accesses intervene in the sequence or the sequence will be aborted. RECALL U637H256 cycles may also be initiated by a software sequence. Internally, RECALL U637H256 is a two step procedure. First, the SRAM data is cleared and second, the nonvolatile information is transferred into the SRAM cells.

The RECALL operation in no way alters the data in the EEPROM cells. The nonvolatile data of U637H256 can be recalled an unlimited number of times. The U637H256 is pin compatible with standard SRAMs and standard battery backed SRAMs.




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