Features: ·Integrated Mixer, LO Buffer and Output Amplifier·8 dB Conversion Gain·15 dB Image Rejection·+17 dBm OIP3·+6 dBm LO Drive Level·-12 dBm LO Leakage Power·100% On-Wafer RF and DC Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +6.0 VDC S...
U1005-BD: Features: ·Integrated Mixer, LO Buffer and Output Amplifier·8 dB Conversion Gain·15 dB Image Rejection·+17 dBm OIP3·+6 dBm LO Drive Level·-12 dBm LO Leakage Power·100% On-Wafer RF and DC Testing·100...
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Supply Voltage (Vd) | +6.0 VDC |
Supply Current (Id1,2,3) | 250,150,250 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (IF Pin) | +0.0 dBm |
Storage Temperature (Tstg) | -65 to +165 OC |
Operating Temperature (Ta) | -55 to MTTF Table 1 |
Junction Temperature (Tch) | MTTF Table 1 |
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's 10.0-18.0 GHz GaAs MMIC transmitter provides +17 dBm output third order intercept and 15 dB image rejection across the band. This U1005-BD device is an image reject, balanced mixer followed by a two stage output amplifier. The image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband. This U1005-BD MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The U1005-BD chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.