Features: · Fundamental Transmitter· Low DC Power Consumption· Optional Power Bias Configuration· 0.0 dB Conversion Gain· +12.0 dBm Third Order Intercept (IIP3)· 100% On-Wafer RF and DC Testing· 100% Visual Inspection to MIL-STD-883· Method 2010Specifications Supply Voltage (Vd) +6.0 VDC ...
U1000: Features: · Fundamental Transmitter· Low DC Power Consumption· Optional Power Bias Configuration· 0.0 dB Conversion Gain· +12.0 dBm Third Order Intercept (IIP3)· 100% On-Wafer RF and DC Testing· 100...
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Supply Voltage (Vd) | +6.0 VDC |
Supply Current (Id) | 50 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (IF Pin) | +10 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTTFTable3 |
Channel Temperature (Tch) | MTTF Table3 |
(3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's 17.0-27.0 GHz GaAs MMIC transmitter has a small signal conversion gain of 0.0 dB with a third order intercept of +12.0 dBm across the band. The U1000 device is a single fundamental mixer followed by a single stage amplifier. This U1000 MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This U1000 device is well suited for Millimeter-wave Point-to- Point Radio, LMDS, SATCOM and VSAT applications.