Features: Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010Specifications Drain Bias Voltage (Vd) +5.0 Vdc ...
U1003: Features: Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain 100% On-Wafer RF and DC Testing 100%...
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Drain Bias Voltage (Vd) | +5.0 Vdc |
Supply Current (Id1,Id2) | 320, 165 mA |
Gate Bias Voltage (Vg) | +5.0 Vdc |
Input Power (IF Pin) | 0.0 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTTF Table1 |
Channel Temperature (Tch) | MTTF Table1 |
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's 19.0-26.0 GHz GaAs MMIC transmitter has a +20.0 dBm output third order intercept and 15.0 dB image rejection across the band. This U1003 device is an image reject subharmonic anti-parallel diode mixer followed by a balanced two stage output amplifier and includes an integrated LO buffer amplifier. The image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. The use of a sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The U1003 chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This U1003 device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.