Features: ·Sub-harmonic Transmitter·Integrated IR Mixer, LO Buffer & Output Amplifier·2.0 dBm LO Drive Level·15.0 dB Image Rejection, 10.0 dB Conversion Gain·7x7 mm, QFNSpecifications Supply Voltage (Vd) +5.0 VDC Supply Current (Id1,Id2) 320, 165 mA Gate Bias Voltage (Vg) +0.5 VD...
U1003-QD: Features: ·Sub-harmonic Transmitter·Integrated IR Mixer, LO Buffer & Output Amplifier·2.0 dBm LO Drive Level·15.0 dB Image Rejection, 10.0 dB Conversion Gain·7x7 mm, QFNSpecifications Suppl...
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Supply Voltage (Vd) | +5.0 VDC |
Supply Current (Id1,Id2) | 320, 165 mA |
Gate Bias Voltage (Vg) | +0.5 VDC |
Input Power (IF Pin) | +0.0 dBm |
Storage Temperature (Tstg) | -65 to +165 OC |
Operating Temperature (Ta) | -55 to MTTF Table 1 |
Junction Temperature (Tch) | MTTF Table 1 |
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's 19.0-26.0 GHz GaAs MMIC transmitter has a +20.0 dBm output third order intercept and 15.0 dB image rejection across the band. This U1003-QD device is an image reject sub-harmonic anti-parallel diode mixer followed by a balanced two stage output amplifier and includes an integrated LO buffer amplifier. The image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. The use of a sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband. This U1003-QD MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The U1003-QD device comes in a 7x7mm QFN surface mount laminate package that is RoHS compliant. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.