Features: Sub-harmonic TransmitterIntegrated IR Mixer, LO Buffer & Output Amplifier+20.0 dBm Output Third Order Intercept (OIP3)2.0 dBm LO Drive Level15.0 dB Image Rejection, 10.0 dB Conversion Gain100% On-Wafer RF and DC Testing100% Visual Inspection to MIL-STD-883 Method 2010Specifications ...
U1002: Features: Sub-harmonic TransmitterIntegrated IR Mixer, LO Buffer & Output Amplifier+20.0 dBm Output Third Order Intercept (OIP3)2.0 dBm LO Drive Level15.0 dB Image Rejection, 10.0 dB Conversion ...
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Supply Voltage (Vd) Supply Current (Id1,Id2) Gate Bias Voltage (Vg) Input Power (IF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) |
+4.5 VDC 320, 165 mA +0.3 VDC 0.0 dBm -65 to +165 -55 to MTTF Table3 MTTF Table3 |
(3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's 18.0-25.0 GHz GaAs MMIC transmitter has a +20.0 dBm output third order intercept and 15.0 dB image rejection across the band. This U1002 device is an image reject subharmonic anti-parallel diode mixer followed by a balanced two stage output amplifier and includes an integrated LO buffer amplifier. The image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. The use of a sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The U1002 chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This U1002 device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.