Features: ·Sub-Harmonic Transmitter·Low DC Power Consumption·Optional Power Bias·8.0 dB Conversion Gain·30 dB LO/RF Isolation·100% On-Wafer RF and DC Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +6.0 VDC Supply Current (Id) 70 mA Gate Bia...
U1001-BD: Features: ·Sub-Harmonic Transmitter·Low DC Power Consumption·Optional Power Bias·8.0 dB Conversion Gain·30 dB LO/RF Isolation·100% On-Wafer RF and DC Testing·100% Visual Inspection to MIL-STD-883 Me...
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Supply Voltage (Vd) | +6.0 VDC |
Supply Current (Id) | 70 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (IF Pin) | +0.3 VDC |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTTF Table4 |
Channel Temperature (Tch) | MTTF Table4 |
Mimix Broadband's 33.0-40.0 GHz GaAs MMIC transmitter has a small signal conversion gain of 8.0 dB with a 30.0 dB LO/RF isolation. The U1001-BD device has a pair of sub-harmonic mixers configured to form an image reject mixer which requires an LO at 15.5-21.5 GHz. This is followed by a two stage LNA. The image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. The use of the sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The U1001-BD chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This U1001-BD device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.