TSUS540

The TSUS540 is infrared emitting diodes in stan-dard GaAs on GaAs technology, molded in a clear, bluegrey tinted plastic package. The devices are spectrally matched to silicon photodiodes and photo-transistors.

The features of the TSUS540 are: (1)Low cost emitter; (2)Low forward voltage; (3)High radiant power and radiant intensity; (4)Suitable for DC and high pulse current operation; (5)Standard T13/4 (? 5 mm) package; (6)Comfortable angle of half intensity = ± 22°; (7)Peak wavelength p = 950 nm; (8)High reliability; (9)Good spectral matching to Si photodetectors.

The absolute maximum ratings of the TSUS540 are: (1)Reverse Voltage: 5 V; (2)Forward Curren: 150 mA; (3)Peak Forward Current: 300mA at tp/T = 0.5, tp = 100s; (4)Surge Forward Current: 2.5A at tp = 100s; (5)Power Dissipation: 210 mW; (6)Junction Temperature: 100; (7)Operating Temperature Range: 55 to +100; (8)Storage Temperature Range: 55 to +100; (9)Soldering Temperature: 260 at t 5sec, 2 mm from case; (10)Thermal Resistance Junction/Ambient: 375 K/W.