TSUS4300

Beam Angle :
Package / Case : T-1
Packaging : Bulk
Maximum Operating Temperature : + 100 C
Minimum Operating Temperature : - 55 C
Wavelength : 950 nm
Radiant Intensity : 160 mW/sr


Features:

High radiant power and radiant intensity
Low forward voltage
Suitable for DC and high pulse current operation
Standard T1(ø 3 mm) package
Angle of half intensity = ± 16°
Peak wavelength _p = 950 nm
High reliability
Good spectral matching to Si photodetectors




Application

Infrared remote control systems with small package and low cost requirements in combination with silicon photo detectors. Infrared source in reflective sensors, tabe end detection. Excellent matching with phototransistor TEFT 4300.




Specifications

Parameter	Test Conditions	Symbol	Value	Unit
Reverse Voltage		VR	5	V
Forward Current		IF	100	mA
Peak Forward Current	tp/T = 0.5, tp = 100 s	IFM	200	mA
Surge Forward Current	tp = 100 s	IFSM	2	A
Power Dissipation		PV	170	mW
Junction Temperature		Tj	100
Operating Temperature Range		Tamb	55...+100
Storage Temperature Range		Tstg	55...+100
Soldering Temperature	t 5sec, 2 mm from case	Tsd	260
Thermal Resistance Junction/Ambient		RthJA	450	K/W

Description

TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.