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TSTS730.

Features: High radiant intensitySuitable for pulse operationAngle of half intensity = ± 12°Peak wavelength p = 950 nmHigh reliabilityGood spectral matching to Si photodetectorsApplicationRadiation source in near infrared rangeSpecifications Parameter Test Conditions Symbol Value Unit ...

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SeekIC No. : 004530721 Detail

TSTS730.: Features: High radiant intensitySuitable for pulse operationAngle of half intensity = ± 12°Peak wavelength p = 950 nmHigh reliabilityGood spectral matching to Si photodetectorsApplicationRadiation s...

TSTS730. Data Sheet

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Part Number:
TSTS730.
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

High radiant intensity
Suitable for pulse operation
Angle of half intensity = ± 12°
Peak wavelength p = 950 nm
High reliability
Good spectral matching to Si photodetectors


Application

Radiation source in near infrared range


Specifications

Parameter Test Conditions Symbol Value Unit
Reverse Voltage   VR 5 V
Forward Current Tcase 25 IF 250 mA
Peak Forward Current tp/T = 0.5, tp = 100 s,Tcase 25 IFM 500 mA
Surge Forward Current tp = 100 s IFSM 2.5 A
Power Dissipation   PV 170 mW
Tcase 25 PV 500 mW
Junction Temperature   Tj 100
Storage Temperature Range   Tstg 55...+100
Thermal Resistance Junction/Ambient   RthJA 450 K/W
Thermal Resistance Junction/Case   RthJC 150 K/W



Description

The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO18 package. Their glass lenses provide a high radiant intensity without external optics.


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