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TSTS7100

Infrared Emitters 5 Degree 170mW 950nm

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SeekIC No. : 0019101 Detail

TSTS7100: Infrared Emitters 5 Degree 170mW 950nm

TSTS7100 Data Sheet

floor Price/Ceiling Price

US $ .93~1.27 / Piece | Get Latest Price
Part Number:
TSTS7100
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.27
  • $1.15
  • $1.02
  • $.93
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Quick Details

Wavelength : 950 nm Radiant Intensity : 50 mW/sr
Maximum Operating Temperature : + 100 C Package / Case : TO-18
Packaging : Bulk    

Description

Beam Angle :
Minimum Operating Temperature :
Packaging : Bulk
Maximum Operating Temperature : + 100 C
Package / Case : TO-18
Radiant Intensity : 50 mW/sr
Wavelength : 950 nm


Features:

• Package type: leaded
• Package form: TO-18
• Dimensions (in mm): 4.7
• Peak wavelength: p = 950 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 5°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC




Application

• Radiation source in near infrared range




Specifications

PARAMETER TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
5
V
Forward current Tcase 25
IF
250
mA
Peak forward current tp/T = 0.5, tp 100 s, Tcase 25
IFM
500
mA
Surge forward current tp 100 s
IFSM
2.5
A
Power dissipation
PV
170
mW
Tcase 25
PV
500
mW
Junction temperature
Tj
100
Storage temperature range
Tstg
- 55 to + 100
Thermal resistance junction/ambient leads not soldered
RthJA
450
K/W
Thermal resistance junction/case leads not soldered
RthJC
150
K/W





Description

TSTS7100 is an infrared, 950 nm emitting diode in GaAs technology in a hermetically sealed TO-18 package with lens.






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