TSML3700

Features:

• SMT IRED with extra high radiant power
• Low forward voltage
• Compatible with automatic placement equipment
• EIA and ICE standard package
• Suitable for infrared, vapor phase and wavesolder process
• Available in 8 mm tape
• Suitable for pulse current operation
• Extra wide angle of half intensity = ± 60
• Peak wavelength p = 925 nm
• High reliability
• Matching to TEMT3700 phototransistor


Application

Infrared source in tactile keyboards IR diode in low space applications Matching with phototransistor TEMT3700 in reflective sensors High performance PCB mounted infrared sensors High power infrared emitter for miniature light barriers

Specifications

Parameter	Test Conditions	Symbol	Value	Unit
Reverse Voltage		VR	5	V
Forward Current		IF	100	mA
Peak Forward Current	tp/T = 0.5, tp = 100s	IFM	200	mA
Surge Forward Current	tp = 100 s	IFSM	1	A
Power Dissipation		PV	170	mW
Junction Temperature		Tj	100
Operating Temperature Range		Tamb	55...+100
Storage Temperature Range		Tstg	55...+100
Soldering Temperature	t10sec	Tsd	260
Thermal Resistance Junction/Ambient	on PC board	RthJA	450	K/W

Description

TSML3700 is an infrared emitting diode in GaAlAs on GaAs technology in a miniature PLCC2 SMD package.

TSML3700 has been designed to meet the increasing demand on optoelectronic devices for surface mounting.The package consists of a lead frame which is surrounded with a white thermoplast. The reflector inside the package is filled up with clear epoxy.This new package achieves an improvement of 100% in radiant intensity, compared with the old SOT23 package.