Infrared Emitters 5V 35mW 940nm 12 Deg
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Wavelength : | 950 nm | Radiant Intensity : | 7 mW/sr | ||
Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C | ||
Package / Case : | SMD | Packaging : | Reel |
Parameter |
Test condition |
Symbol |
Value |
Unit |
Reverse Voltage |
VR |
5 |
V | |
Forward Current |
IF |
100 |
mA | |
Peak Forward Current | tp/T = 0.5, tp = 100 s |
IFM |
200 |
mA |
Surge Forward Current | tp = 100 s |
IFSM |
1.0 |
A |
Power Dissipation |
PV |
190 |
mW | |
Junction Temperature |
Tj |
100 |
||
Operating Temperature Range |
Tamb |
- 40 to + 85 |
||
Storage Temperature Range |
Tstg |
- 40 to + 100 |
||
Soldering Temperature | t 5sec |
Tsd |
<260 |
|
Thermal Resistance Junction/Ambient |
RthJA |
400 |
TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package.
This technology of TSML1000 series represents best performance for radiant power under pulse conditions, forward voltage and reliability.