Features: • High radiant power• High speed tr = 30 ns• High modulation band width fc = 12 MHz• Peak wavelength p = 870 nm• High reliability• Low forward voltage• Suitable for high pulse current application• Wide angle of half intensity• Compati...
TSMF3710: Features: • High radiant power• High speed tr = 30 ns• High modulation band width fc = 12 MHz• Peak wavelength p = 870 nm• High reliability• Low forward voltage...
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Parameter |
Test condition |
Symbol |
Value |
Unit |
Reverse voltage |
VR |
5 |
V | |
Forward current |
IF |
100 |
mA | |
Peak forward current | tp/T = 0.5, tp = 100 s |
IFM |
200 |
mA |
Surge forward current | tp = 100 s |
IFSM |
1 |
A |
Power dissipation |
PV |
170 |
mW | |
Junction temperature |
Tj |
100 |
||
Operating temperature range |
Tamb |
- 40 to + 85 |
||
Storage temperature range |
Tstg |
- 40 to + 100 |
||
Soldering temperature | t 10 sec |
Tsd |
260 |
|
Thermal resistance unction/ ambient |
RthJA |
450 |
K/W |
TSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package.
DH technology combines high speed with high radiant power at wavelength of 870 nm.