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TSMF2000

Features: • Extra high radiant power• Low forward voltage• Suitable for high pulse current operation• Angle of half intensity = ± 17•• Peak wavelength p = 870 nm• High reliability• Good spectral matching to Si photodetectorsApplicationIrDA compatible...

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SeekIC No. : 004529719 Detail

TSMF2000: Features: • Extra high radiant power• Low forward voltage• Suitable for high pulse current operation• Angle of half intensity = ± 17•• Peak wavelength p = 870 nm&...

TSMF2000 Data Sheet

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Part Number:
TSMF2000
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

• Extra high radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Angle of half intensity = ± 17•
• Peak wavelength p = 870 nm
• High reliability
• Good spectral matching to Si photodetectors


Application

IrDA compatible Free air transmission systems For control and drive circuits Photointerrupters Punched tape readers




Specifications

Parameter Test Conditions Symbol Value Unit
Reverse Voltage   VR 5 V
Forward Current   IF 100 mA
Peak Forward Current tp/T = 0.5, tp = 100s IFM 200 mA
Surge Forward Current tp = 100 s IFSM 1.0 A
Power Dissipation   PV mW
Junction Temperature   Tj 100  
Operating Temperature Range   Tamb 40...+80  
Storage Temperature Range   Tstg 40...+80  
Soldering Temperature t5sec, 2 mm from case Tsd 260  



Description

TSMF2000 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package

In comparison with the standard GaAs on GaAs technology these TSMF2000 emitters achieve about 100 % radiant power improvement at a similar wavelength.The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters.




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