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TSM9966DCX6

MOSFET 20V Dual N channel MOSFET

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SeekIC No. : 00155372 Detail

TSM9966DCX6: MOSFET 20V Dual N channel MOSFET

TSM9966DCX6 Data Sheet

floor Price/Ceiling Price

US $ .1~.1 / Piece | Get Latest Price
Part Number:
TSM9966DCX6
Mfg:
Taiwan Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~15000
  • Unit Price
  • $.1
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Quick Details

Packaging : Reel    

Description

Transistor Polarity :
Drain-Source Breakdown Voltage :
Gate-Source Breakdown Voltage :
Continuous Drain Current :
Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Reel


Features:

·Advanced trench process technology
·High density cell design for ultra low on-resistance
·Excellent thermal and electrical capabilities
·Surface mount
·Fast switching


Specifications

Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20V
V
Gate-Source Voltage
VGS
± 12
V
Continuous Drain Current, VGS @4.5V.
ID
5
A
Pulsed Drain Current, VGS @4.5V
IDM
20
A
Maximum Power Dissipation
Ta = 25
PD
1.25
W
Ta > 25
16
mW/
Operating Junction Temperature
TJ
+150
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150



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