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TSM9428

Features: ·Advanced trench process technology·High density cell design for ultra low on-resistance·Fully Characterized Avalanche Voltage and Current·Improved Shoot-Through FOMSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 20V V Gate-Source Voltage VGS ±8 V ...

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TSM9428: Features: ·Advanced trench process technology·High density cell design for ultra low on-resistance·Fully Characterized Avalanche Voltage and Current·Improved Shoot-Through FOMSpecifications Par...

TSM9428 Data Sheet

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Part Number:
TSM9428
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Advanced trench process technology
·High density cell design for ultra low on-resistance
·Fully Characterized Avalanche Voltage and Current
·Improved Shoot-Through FOM


Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20V V
Gate-Source Voltage VGS ±8 V
Continuous Drain Current, ID 6 A
Pulsed Drain Current, IDM 20 A
Maximum Power Dissipation Ta = 25 PD 2.5 W
Ta = 70 1.6
Operating Junction Temperature TJ +150
Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150



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