Features: Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Surface mount Fast switching Specifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VG...
TSM9926D: Features: Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Surface mount Fast switching Specifications ...
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Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Surface mount
Fast switching
Parameter | Symbol | Limit | Unit | |
Drain-Source Voltage | VDS |
20 |
V | |
Gate-Source Voltage |
VGS |
±12 |
V | |
Continuous DrainCurrent,VGS@4.5V. |
ID |
6 |
A | |
Pulsed Drain Current, VGS@4.5V |
IDM |
30 |
A | |
Maximum Power Dissipation | Ta=25 | PD | 1.25 | W |
Ta = 25(Peak) | 2 | W | ||
Operating Junction Temperature | TJ | +150 | ||
Operating Junction and Storage Temperature Range | TJ,Tstg | -55 to +150 |