Features: · Advanced trench process technology· High density cell design for ultra low on-resistance· Fully Characterized Avalanche Voltage and Current· Improved Shoot-Through FOMSpecifications Parameter Symbol Limit Units Drain-Source Voltage VD...
TSM9435: Features: · Advanced trench process technology· High density cell design for ultra low on-resistance· Fully Characterized Avalanche Voltage and Current· Impro...
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Parameter | Symbol | Limit | Units | |
Drain-Source Voltage | VDS | -30V | V | |
Gate-Source Voltage | VGS | ±20 | V | |
Continuous Drain Current | ID | -5.3 |
A | |
Pulsed Drain Current | IDM | -20 | ||
Maximum Power Dissipation | Ta=25 | PD | 2.5 | W |
Ta=70 | 1.3 | |||
Operating Junction Temperature | TJ | +150 | ||
Operating Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 |