Features: · Advance Trench Process Technology· High Density Cell Design for Ultra Low On-resistance· ESD Protect 2KVApplication· Specially Designed for Li-on Battery Packs· Battery Switch ApplicationSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 ...
TSM7900D: Features: · Advance Trench Process Technology· High Density Cell Design for Ultra Low On-resistance· ESD Protect 2KVApplication· Specially Designed for Li-on Battery Packs· Battery Switch Applicatio...
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Parameter |
Symbol |
Limit |
Unit | ||
Drain-Source Voltage |
VDS |
20 |
V | ||
Gate-Source Voltage |
VGS |
±12 |
V | ||
Continuous Drain Current, VGS @4.5V. |
ID |
6 |
A | ||
Pulsed Drain Current, VGS @4.5V |
IDM |
30 |
A | ||
Continuous Source Current (Diode Conduction)a,b |
IS |
1.4 |
A | ||
Maximum Power Dissipation | Ta=25 |
PD |
1.25 |
W | |
Ta=75 |
0.8 | ||||
Operating Junction Temperature |
TJ |
+150 |
|||
Operating Junction and Storage Temperature Range |
TJ, TSTG |
-50 to +150 |