Features: Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Surface mount Fast switching Specifications Parameter Symbol Limit Unit Drain-Source Voltage VDS -20V V Gate-Source Voltage VGS ±...
TSM7104D: Features: Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Surface mount Fast switching Specifications Param...
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Parameter | Symbol | Limit | Unit | |
Drain-Source Voltage | VDS | -20V | V | |
Gate-Source Voltage | VGS | ± 8 | V | |
Continuous Drain Current, VGS @4.5V. | ID | -2.3 | A | |
Pulsed Drain Current, VGS @4.5V | IDM | -10 | A | |
Maximum Power Dissipation | Ta = 25 | PD | 2 | W |
Ta > 25 | 16 | mW/ | ||
Operating Junction Temperature | TJ | +150 | ||
Operating Junction and Storage Temperature Range | TJ, TSTG | - 55 to +150 |