Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switch PA SwitchSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Curren...
TSM4953D: Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switch PA SwitchSpecifications Parameter Symbol Limit Unit Drain-So...
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Parameter |
Symbol |
Limit |
Unit | |
Drain-Source Voltage |
VDS |
-30 |
V | |
Gate-Source Voltage |
VGS |
±20 |
V | |
Continuous Drain Current |
ID |
-4.9 |
A | |
Pulsed Drain Current |
IDM |
-20 |
A | |
Continuous Source Current (Diode Conduction)a,b |
IS |
-2.6 |
A | |
Maximum Power Dissipation | Ta = 25 |
PD |
2.5 |
W |
Ta = 70 |
1.3 | |||
Operating Junction Temperature |
TJ |
+150 |
||
Operating Junction and Storage Temperature Range |
TJ, TSTG |
- 55 to +150 |