TSM4392 Selling Leads, Price trend, TSM4392 DataSheet download, circuit diagram from SeekIC.com

Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication High-Side DC/DC Conversion Notebook SeverSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Contin...

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SeekIC No. : 004529672 Detail

TSM4392: Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication High-Side DC/DC Conversion Notebook SeverSpecifications Parameter Symbol Limit...

TSM4392 Data Sheet

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Part Number:: TSM4392
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2025/1/11

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US $.23 - .23 / Piece

MOSFET 30V N channel MOSFET

Product Details

Description

Features:

Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance

Application

High-Side DC/DC Conversion
Notebook
Sever

Specifications

Parameter		Symbol	Limit	Unit
Drain-Source Voltage		V_DS	30	V
Gate-Source Voltage		V_GS	±20	V
Continuous Drain Current		I_D	12.5	A
Pulsed Drain Current		I_DM	50	A
Continuous Source Current (Diode Conduction)^a,b		I_S	2.7
Maximum Power Dissipation	T_a = 25	P_D	3.0	W
Maximum Power Dissipation	T_a = 75	P_D	1.9	W
Operating Junction Temperature		T_J	+150
Operating Junction and Storage Temperature Range		T_J, T_STG	- 55 to +150

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TSM4392

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