TSM4944D

Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switch Dc-DC ConversionSpecifications Parameter Symbol Rating Unit Drain-Source Voltage VDG 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 12.2...

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SeekIC No. : 004529690 Detail

TSM4944D: Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switch Dc-DC ConversionSpecifications Parameter Symbol Rating Unit Drain-...

floor Price/Ceiling Price

Part Number:
TSM4944D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance



Application

Load Switch
Dc-DC Conversion



Specifications

Parameter Symbol Rating Unit
Drain-Source Voltage VDG 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 12.2 A
Pulsed Drain Current IDM 30
Continuous Source Current (Diode Conduction)a,b IS 1.9 A
Maximum Power Dissipation Ta = 25 PD 2.3 W
Ta = 75 1.2
Operating Junction Temperature TJ +150  
Operating and Storage Temperature Range TJ, Tstg -55 to +150



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